Low‐Resistivity Ti/Al/TiN/Au Ohmic Contacts to Ga‐ and N‐Face n‐GaN for Vertical Power Devices

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1. 1Fabrication and formation mechanisms of Ohmic conducts with low annealing temperature for GaN/AlN superlattice barrier HEMTs2024
2. 2Low contact resistivity at the 10−4 Ω cm2 level fabricated directly on n-type AlN2024 · 3 citations
3. 3Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique2024 · 7 citations
4. 4Stable low-resistance ohmic contact on GaN via an oxynitride interlayer over 20–200 °C: Mechanisms and performance2026
5. 5Investigation of Ti/Al/Ni/Au ohmic contacts for AlScN/GaN HEMTs2026 · 1 citations