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June 14, 2026Journal of Applied Physics

Stable low-resistance ohmic contact on GaN via an oxynitride interlayer over 20–200 °C: Mechanisms and performance

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Authors

SXShujie XieHXHJ XuCWCaiping Wan

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Overview

Randomized trial demonstrates improved contact stability in GaN devices, suggesting effective interface engineering strategies.

Key Points

  • This research aims to improve the stability and performance of ohmic contacts in GaN-based devices by using an oxynitride interlayer.
  • Systematic study of Ti-based ohmic contacts on selective-area regrowth n+-GaN from 20 to 200 °C.
  • Comparison of untreated interfaces with those modified by TiOxNy or GaOxNy interlayers.
  • Use of microstructural analysis, temperature-dependent electrical measurements, and conductance-based interface-state characterization.
  • Untreated contacts show non-monotonic resistivity changes with temperature.
  • Interlayer-modified contacts exhibit a stable, monotonic decrease in specific contact resistivity.
  • The GaOxNy interlayer achieves approximately 10−8 Ω cm² above 100 °C, indicating superior performance.

Cite This Study

Xie et al. (2026) studied this question.

synapsesocial.com/papers/6a2e4608b1cc60ccdea8aeechttps://doi.org/10.1063/5.0324776
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