Gate Engineered AlGaN/GaN HEMT to Reduce the Trapping Effects and Improve Reliability

A new gate engineering technique is used in high electron mobility transistors (HEMTs), based on wide bandgap semiconductor materials such as gallium nitride (GaN) to increase the device performance and reliability for high power and high frequency applications. The proposed double-π gate technique showed better results in electrical parameters such as drain saturation current, transconductance and threshold voltage. Reduction of trapping effects and threshold voltage shifts (∆VTH), in a positive direction improves device dependability in the switching and radio frequency regimes. A large number of transistors are employed to investigate the wide range of characteristics, including pulsed i-v characteristics for the investigation.