November 17, 2025NanomaterialsOpen Access

An Analytic Compact Model for P-Type Quasi-Ballistic/Ballistic Nanowire GAA MOSFETs Incorporating DIBL Effect

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The model effectively captures ballistic transport and drain-induced barrier lowering in devices.
Validation against simulation results confirms the model's reliability for circuit-level applications.
Assessment of the model utilizes Verilog-A for implementing CMOS inverter simulations.
Continued exploration into nanowire structures may enhance semiconductor technology.

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An analytic approach demonstrates ballistic transport in nanowire GAA MOSFETs, indicating practical applications in nanoscale design.

Cheng et al. (2025) studied this question.

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