Research and solution of some challenges in eliminating problems in the technology of obtaining porous p-silicon by the anodic etching method

A study of the shortcomings in the technology of porous silicon production under scientific laboratory conditions by the anodic etching (AE) method was conducted and an attempt was made to eliminate these shortcomings. For this purpose, a version of a laboratory device for AE of silicon was developed and manufactured. A number of porous silicon samples with improved repeatability of output parameters, without edge effects, with compact sizes of the edge zone were obtained on it. It was possible to significantly simplify the technology of AE of silicon, in particular, to abandon the use of contact conductive pastes. An explanation of the mechanism of occurrence of edge effects and a technological solution for their elimination are proposed.