Toward Reliable Metal Halide Perovskite FETs: From Electronic Structure and Device Physics to Stability and Performance Engineering

Metal halide perovskite field‐effect transistors (PeFETs) have rapidly gained recognition as leading candidates for next‐generation electronic and optoelectronic technologies, owing to their exceptional optoelectronic properties, facile solution processability, and notable mechanical flexibility. Nevertheless, the practical deployment of high‐performance PeFETs is significantly impeded by persistent challenges, including ion migration, hysteresis effects, and environmental instability, which collectively hinder their widespread adoption. This review offers a thorough and up‐to‐date overview of recent progress in the field of PeFETs, with particular emphasis on advances in material engineering, device architecture optimization, and innovative processing techniques designed to enhance device performance. The discussion encompasses the fundamental physics governing charge transport in perovskite semiconductors, with a focus on the influence of defect chemistry, interface engineering, and stability considerations. Special attention is devoted to a comparative analysis of tin‐based and lead‐based PeFETs, elucidating their respective charge transport mechanisms, benefits, and limitations. The review concludes by identifying the principal challenges and outlining future research directions that are essential for realizing the full potential of perovskite transistors in delivering high‐speed, flexible, and cost‐effective electronic devices.