Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

One‐transistor‐one‐memristor (1T1R) structures are essential for large‐scale memristor arrays, as they enable precise read and write operations for individual cells. Currently, most 1T1R designs employ planar field‐effect transistors with laterally arranged source, drain, and channel, which limit the achievable array density within a planar layout. Here, we demonstrate a compact, vertically integrated 1T1R cell by stacking a MoS 2 vertical field‐effect transistor (VFET) with a HfO 2 memristor. The VFET channel achieves a footprint of only 10 µm 2 , which reduces reliance on advanced lithography and enables a reduced 1T1R cell area compared with some reported standard 0.18 µm silicon‐based 1T1R implementations. The cell exhibits highly uniform resistive switching, with coefficients of variation ( C v ) of only 3.4% in the high‐resistance state (HRS) and 6.2% in the low‐resistance state (LRS). Furthermore, it achieves quasi‐linear conductance modulation across six discrete levels via VFET gate control. This demonstration establishes a scalable, area‐efficient platform for 3D in‐memory computing and neuromorphic structures.