Monolithic Integration of Reliable Memristor Arrays and a Homogeneous 1T1R Unit Using All-Solution-Processed MoS ₂

Xinfei Guan; Xu Jing; Yuqing Zhang; Wentao Zhou; Chang Liu (35901); Zixiang Mao; Xi Zhang; Rui Yang; Li Tao

doi:10.1021/acs.nanolett.6c00806

June 4, 2026Nano Letters

Monolithic Integration of Reliable Memristor Arrays and a Homogeneous 1T1R Unit Using All-Solution-Processed MoS ₂

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Key Points

This work aims to develop a robust memory system using memristor arrays and a 1T1R unit with MoS2 semiconductors.
Utilized all-solution-processable MoS2 for fabricating memristor arrays and 1T1R units.
Implemented precise switching window control and current compliance modulation for enhanced performance.
Demonstrated scalability through high-density array formation.
The memristor arrays achieved significant improvement in switching efficiency and precision.
The current compliance modulation resulted in optimized performance metrics for neuromorphic computing.
Demonstrated the feasibility of scalable memory solutions using all-solution-processed materials.

Implication

Shows enhanced memory and computing performance in high-density applications, suggesting scalability benefits.

Abstract

ink-based one-transistor one-memristor (1T1R) is featured with precise switching window control and current compliance modulation. This work offers a scalable and reliable route to high-density memory and hardware neuromorphic computing architectures with all-solution-processable 2D semiconductors.

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Cite This Study

Guan et al. (2026) studied this question.

synapsesocial.com/papers/6a250be87def13d035e1be9a https://doi.org/10.1021/acs.nanolett.6c00806

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Monolithic Integration of Reliable Memristor Arrays and a Homogeneous 1T1R Unit Using All-Solution-Processed MoS ₂

Key Points

Implication

Abstract

Discussion

Cite This Study

Monolithic Integration of Reliable Memristor Arrays and a Homogeneous 1T1R Unit Using All-Solution-Processed MoS ₂

Key Points

Implication

Abstract

Discussion

Cite This Study

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