Obtaining analytical expressions for the characteristics of field-effect transistors using a special Lambert function

Analytical expressions are obtained for the characteristics of junction-gate field-effect transistors and internal-channel MOSFETs (transistors with both an -channel and a -channel are considered). Instead of the hyperbolic tangent function, which is used in the well-known Curtice-Eitenberg model, the new expressions are based on the volt-ampere characteristic of a semiconductor diode with ohmic resistance (using a special Lambert function). These expressions describe both linear mode, saturation mode, and cutoff mode. Four parameters are used. A method for accounting for the slope of the characteristics is also proposed (while adding another parameter). Examples of graphs constructed using the obtained expressions are presented.