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November 15, 2000Journal of Applied Physics

Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors

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Authors

EMEric J MillerIcahn School of Medicine at Mount SinaiXDX. Z. DangShaanxi Institute of International Trade & CommerceEYEdward T. YuStevens Institute of Technology

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Miller et al. (2000) studied this question.

synapsesocial.com/papers/69daaa4a8988aeabbe68746chttps://doi.org/10.1063/1.1319972
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