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May 1, 1996Journal of Applied Physics

Electron spectroscopic analysis of the SiO2/Si system and correlation with metal–oxide–semiconductor device characteristics

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Authors

SISeiichi IwataHitachi (Japan)AIAkitoshi IshizakaFukushima Medical University

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Iwata et al. (1996) studied this question.

synapsesocial.com/papers/69dbe98e387cf7069868928dhttps://doi.org/10.1063/1.362676
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Photoemission study of the SiO2/Si interface structure of thin oxide films on Si(100), (111), and (110) surfaces1991 · 72 citations
  2. 2Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels: I . Theory1979 · 120 citations
  3. 3The metal-semiconductor interface: Si (111) and zincblende (110) junctions1977 · 280 citations