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Interchanging the base and collector positions in quantum well and barrier heterostructure tunneling devices yields negligible base currents and large current transfer ratios by allowing base voltage to control emitter-collector tunneling via resonance shifting. Novelty: ClaimNovelty.NOVEL_FINDING. Consensus alignment: ConsensusAlignment.NEUTRAL.

October 15, 1985Applied Physics Letters

Inverted base-collector tunnel transistors

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ABA. R. BonnefoiCalifornia Institute of Technology DCD. H. ChowUniversity of Liverpool TMT. C. McGillOklahoma State University

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Bonnefoi et al. (1985) studied this question.

synapsesocial.com/papers/6a08ccb385b227e46401ea06 https://doi.org/10.1063/1.95966

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October 15, 1985Applied Physics Letters

Inverted base-collector tunnel transistors

View Full Paper

Ask AI

Bookmark

Authors

ABA. R. BonnefoiCalifornia Institute of Technology DCD. H. ChowUniversity of Liverpool TMT. C. McGillOklahoma State University

Discussion

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Bonnefoi et al. (1985) studied this question.

synapsesocial.com/papers/6a08ccb385b227e46401ea06 https://doi.org/10.1063/1.95966

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