The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE

Ultrahigh two-dimensional electron gas mobilities of 244,000 cm 2 /Vs at 5 K and 117,000 cm 2 /Vs at 77 K with a sheet electron concentration of about 4.9×10 11 cm -2 were achieved in a selectively doped GaAs/ N -Al x Ga 1- x As ( x =0.26) heterostructure grown at a “medium” temperature of 580°C by MBE. The mobility obtained at 5 K is much higher that any yet reported for MBE-grown semiconductor materials.