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January 1, 2001IEEE Transactions on Electron Devices

High-voltage drain extended MOS transistors for 0.18-μm logic CMOS process

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Authors

JMJ. MitrosCTChin-Yu TsaiAnalog Devices (United States)HSH. ShichijoAnalog Devices (United States)

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Mitros et al. (2001) studied this question.

synapsesocial.com/papers/6a1266bc8edbaba0bf672edchttps://doi.org/10.1109/16.936703
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