Nondestructive detection and identification of electrically active threading dislocations in n ⁺ -SiC substrates

-SiC substrates. By directly photoionizing the occupied deep states, DS-STD-specific emissions can be activated. Such inherent deep-level emissions of dislocation lines, combined with external surface-state emissions at the etch pits, enable the reconstruction of 3D images with high contrast for the partially etched DS-STDs. This approach overcomes the limitations of conventional PL and paves the way for non-destructive, in-line inspection of electrically active dislocations even in highly doped SiC substrates.