Answers are grounded in this paper and cite their sources.
We have studied the threading dislocations of 4H-SiC substrates with different conductivity types by means of molten KOH defect selective etching.
No takes yet. Share an insight, caveat, or question.
Cui et al. (2018) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: