Electron mobility in short-channel MOSFET's with series resistances

Electron mobilities have been measured in transistors with channel lengths from 5.0 to 0.5 µm. The originally high low-field mobility µ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</inf> ≈ 700 cm 2 /V . s seems to be greatly decreased by parasitic series resitances, to a minor degree also by surface scattering.