What question did this study set out to answer?

To evaluate the use of thermally stimulated capacitance originating from temperature-dependent Fermi level crossings in junction edge regions to detect shallow majority-carrier traps.

April 15, 1973Applied Physics Letters

Thermally stimulated capacitance for shallow majority-carrier traps in the edge region of semiconductor junctions

View Full Paper

Ask AI

Bookmark

Authors

CSC. T. SahUniversity of Florida JWJohn W. WalkerAngelo State University

Discussion

Member takes

Implication

Experimental analysis demonstrates shallow trap detection via edge-region thermally stimulated capacitance in semiconductor junctions, resolving longstanding measurement anomalies.

Key Points

To evaluate the use of thermally stimulated capacitance originating from temperature-dependent Fermi level crossings in junction edge regions to detect shallow majority-carrier traps.
Analyzed thermally stimulated capacitance (TSCAP) mechanisms occurring in the edge region of p-n junctions above 77 K.
Applied the edge-region measurement technique to evaluate oxygen-vacancy centers located 186 meV from the conduction band edge in silicon.
Demonstrated the capability to scan semiconductor band gaps for shallow majority-carrier traps located as close as 60 meV from a band edge above 77 K.
Resolved previously observed measurement anomalies in conventional TSCAP applications by accounting for edge-region contributions.

Cite This Study

Sah et al. (1973) studied this question.

synapsesocial.com/papers/6a1f17bc4d2ebb160c7295c2 https://doi.org/10.1063/1.1654683

View Full Paper

Ask AI

Bookmark

Implication

Experimental analysis demonstrates shallow trap detection via edge-region thermally stimulated capacitance in semiconductor junctions, resolving longstanding measurement anomalies.

Thermally stimulated capacitance for shallow majority-carrier traps in the edge region of semiconductor junctions

Discussion

Member takes

Implication

Key Points

Cite This Study

Thermally stimulated capacitance for shallow majority-carrier traps in the edge region of semiconductor junctions

Discussion

Member takes

Implication

Key Points

Cite This Study

Also Consider

Also Consider