Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

The performance limits of monolayer transition metal dichalcogenide ( MX 2 ) transistors are examined with a ballistic MOSFET model. Using an ab initio theory, we calculate the band structures of 2-D transition MX 2 . We find the lattice structures of monolayer MX 2 remain the same as the bulk MX 2 . Within the ballistic regime, the performances of monolayer MX 2 transistors are better compared with those of the silicon transistors if a thin high-κ gate insulator is used. This makes monolayer MX 2 promising 2-D materials for future nanoelectronic device applications.