Answers are grounded in this paper and cite their sources.
The effects of (NH4)2Sx solution treatment on the interface properties of metal-In0.5Ga0.5P Schottky contacts have been investigated by capacitance-voltage measurements and deep-level transient spectroscopy measurements. The (NH4)2Sx-treated samples show Schottky barrier heights that are more sensitive to the metal work functions. It is also found that (NH4)2Sx treatment of In0.5Ga0.5P can passivate the phosphorus-vacancy-related interface deep traps of Schottky contacts as well as suppress the generation of interface deep traps due to heat treatment.
No takes yet. Share an insight, caveat, or question.
Kwon et al. (1995) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: