Parr

Pin access has become one of the most difficult challenges for detailed routing in advanced technology nodes, for example, in 14nm and below, for which double-patterning lithography has to be used for manufacturing lower metal routing layers with tight pitches, such as M2 and M3. Self-aligned double patterning (SADP) provides better control on line edge roughness and overlay, but it has very restrictive design constraints and prefers regular layout patterns. This article presents a comprehensive pin-access planning and regular routing framework (PARR) for SADP friendliness. Our key techniques include precomputation of both intracell and intercell pin accessibility, as well as local and global pin-access planning to enable handshaking between standard cell-level pin access and detailed routing under SADP constraints. A pin access–driven rip-up and reroute scheme is proposed to improve the ultimate routability. Our experimental results demonstrate that PARR can achieve much better routability and overlay control compared with previous approaches.