Influence of quantum confinement effect of iTFET with control source and control gate

In this work, we investigate the impact of quantum confinement effects (QCE) on the recently proposed Control Source and Control Gate Structured Tunnel Field-Effect Transistor (CSCG-iTFET), extending beyond conventional semiclassical TCAD analysis. By incorporating a self-consistent Schrödinger–Poisson quantum correction into device simulations, we systematically examine how quantum confinement influences the drive current in ultra-thin semiconductor devices. This is the first work that systematically quantifies the influence of QCE on CSCG-iTFET performance. Results reveal that although quantum confinement widens the bandgap and suppresses I ON , the CSCG-iTFET retains an exceptionally steep subthreshold swing (27.3 mV/dec) and negligible I off degradation, outperforming conventional TFET architectures under equivalent scaling. These findings demonstrate that the CSCG-iTFET remains a viable candidate for IRDS-defined ultra-low-power nodes even under severe quantum constraints, and provide physical insight into the limits of scalability for line-tunneling TFETs.