A total dose hardening treatment is applied to SIMOX buried oxides. Total ionizing dose radiation testing is performed on fully-depleted transistors Fabricated on both hardened and non-hardened substrates. At 200 krads X-ray dose, the front gate shift is reduced from -0.7 to -0.2 V for FETs built on the hardened wafers.
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Brady et al. (1996) studied this question.
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