Key points are not available for this paper at this time.
Measurements of monosilicon (SiHn) and disilicon (Si2Hn) radicals at the cathode surface of dc discharges in silane and silane-argon mixtures are reported. Silyl radical density per decomposed silane was constant for fixed flow conditions over a range of powers and silane-argon ratios. The relative densities for other monosilicon radicals SiHn/SiH3 decreased with increased fraction of silane in silane-argon mixtures. The density of disilicon radicals was observed to be comparable to some of the monosilicon radicals, with Si2H2 and Si2H4 the dominant Si2Hn species. Formation and destruction reactions are discussed for these radicals, disilane, and the deposited film. We deduce that disilane is formed primarily on surfaces and that sputtering is a significant source for radicals near the cathode.
Robertson et al. (Thu,) studied this question.