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We have studied the effects of ionizing and non-ionizing radiation on the breakdown properties of different types of MOS capacitors, with thick (200 nm) and thin (down to 8 nm) oxides. In general, no large variations of the average breakdown field, time-to-breakdown at constant voltage, or charge-to-breakdown values have been observed after high dose irradiation (20 Mrad(Si) 9 MeV electrons on thin and thick oxides, 17(Si) Mrad Co/sup 60/ gamma and 10/sup 14/ neutrons/cm/sup 2/ only on thick oxides). However, some modifications of the cumulative failure distributions have been observed in a few of the oxides tested.
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Paccagnell et al. (1996) studied this question.
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