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May 1, 1972IEEE Transactions on Electron Devices

Noise behavior of GaAs field-effect transistors with short gate lengths

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WBW. BaechtoldETH Zurich

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W. Baechtold (1972) studied this question.

synapsesocial.com/papers/6a6f2cf1e5469ee92be0382chttps://doi.org/10.1109/t-ed.1972.17473
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