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February 1, 1971IEEE Transactions on Electron Devices

Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies

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WBW. BaechtoldETH Zurich

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W. Baechtold (1971) studied this question.

synapsesocial.com/papers/6a6f2db875498292b708945ahttps://doi.org/10.1109/t-ed.1971.17156
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  1. 1High-frequency FET noise parameters and approximation of the optimum source admittance1969 · 12 citations
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  5. 5Gate noise in field effect transistors at moderately high frequencies1963 · 218 citations