The design principles of a mass-produced surface micromachined gyroscope are described. The device is integrated on a single 3 mm/spl times/3 mm chip with a 3-/spl mu/m BiCMOS process. It has a 4-/spl mu/m-thick polysilicon structure, 5-V 6-mA supply, 12.5-mV//spl deg//S sensitivity, 10 000:1 dynamic range, 30 000-gee shock survival, and -55/spl deg/C to +85/spl deg/C operating temperature.
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Geen et al. (2002) studied this question.
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