Answers are grounded in this paper and cite their sources.
A study has been made of the carrier transport and optical gain of a heterojunction bipolar phototransistor in the presence of a drift field in the base region. The computational method employed is based on transfer matrices for minority-carrier density in the base region in the presence of ionizing radiation. Scattering matrices for the electron and hole currents are used for computing the avalanche multiplication in the collector junction. The effect of varying the ratio of absorption in the base region to that in the collector has been examined. The expressions derived have been used to estimate the frequency response of the bipolar heterojunction phototransistor.
No takes yet. Share an insight, caveat, or question.
Roy et al. (1987) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: