Answers are grounded in this paper and cite their sources.
This article presents a review of the historical developments in optical detectors and discusses the motivations for interest in III-V semiconductors for optical-detector applications. Early device work in both depletion-mode photodiodes and avalanche photodiodes in III-V semiconductors is covered as well as the improvements that have been made in avalanche photodiode structures through work in silicon. Also, the results of ionization coefficient measurements on III-V compounds are summarized. Finally, several examples of recent avalanche photodiodes that utlilize the unique properties of heterostructures are presented.
No takes yet. Share an insight, caveat, or question.
Stillman et al. (1984) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: