Data are presented showing for the first time that Zn diffusion into a Ga x In 1-x As y P 1-y -InP quantum well and superlattice (of 100 Å thickness) completely disorders the quantum well and superlattice layers. The photoluminescence wavelength of the quantum well and the superlattice increased after Zn diffusion, which can be attributed to the In-Ga interdiffusion at the heterointerfaces as a result of the interchange mechanism between the interstitials and substitutional zinc atoms.
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Razeghi et al. (1987) studied this question.
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