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July 15, 1983Applied Physics Letters

Measurement of local stress in laser-recrystallized lateral epitaxial silicon films over silicon dioxide using Raman scattering

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PZP. ZorabedianHewlett-Packard (United States)FAFran AdarRutgers, The State University of New Jersey

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Zorabedian et al. (1983) studied this question.

synapsesocial.com/papers/6a70ecf3ce524a4339c498behttps://doi.org/10.1063/1.94271
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