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The lattice distortion and crystal curvature in arsenic-implanted silicon wafers are investigated using a technique of double-crystal topography. In this study, a method for quantitative determination of the curvature of asymmetric crystal reflection planes as well as the concavity of specimens is demonstrated. Measurements of samples with different arsenic-implantation fluences indicate that all the crystal surfaces are convex and the radius of curvature decreases with increasing arsenic fluence. Effects of thermal annealing are shown to result in a reduction of the crystal curvature and local lattice distortion.
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KUO et al. (1988) studied this question.
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