Low-Pressure CVD of Carbon Nitride Using Triazine-Containing Precursors

Carbon nitride (CxNy) layers with N/C ratios of 0.76–1.26 have been grown under low pressure from two organic chemical systems, namely 2,4-dichloro-6-bis(trimethylsilyl)imido-1,3,5-triazine [C3N3Cl2N(SiMe3)2] and tetramethylguanidine (C5H13N3) + 2,4,6-trichloro-1,3,5-triazine (C3Cl3N3). The films synthesized are transparent, well-adhered on silicon, homogeneous in morphology, and uniform in thickness. In addition, a technology has been developed for the deposition of carbon nitride powders with a N/C ratio of 1.3 as starting materials for further thermal treatment attempts in order to synthesize crystalline C3N4. At deposition temperatures between 400 and 800 °C and high supersaturation of reagents in the reactor, the powders obtained exhibit nuclei of crystalline phases.