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May 1, 1965IEEE Transactions on Electron Devices

Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces

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Authors

OLOtto LeistikoUniversity of CopenhagenAGAndrew S. GroveMessiah UniversityCSC. T. SahUniversity of Florida

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Leistiko et al. (1965) studied this question.

synapsesocial.com/papers/6a72f184bfabfe3aef60dadchttps://doi.org/10.1109/t-ed.1965.15489
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