Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
November 1, 1983IEEE Transactions on Electron Devices

VLSI Process modelingSUPREM III

View Full Paper
Ask AI
Bookmark
Share

Authors

CHChu Po HoHong Kong Polytechnic UniversityJPJ.D. PlummerDefence Science and Technology LaboratorySHStephen HansenCenter for Economic and Policy Research

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Ho et al. (1983) studied this question.

synapsesocial.com/papers/6a735e418317ef39e84e583chttps://doi.org/10.1109/t-ed.1983.21322
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Nonplanar VLSI device analysis using the solution of Poisson's equation1980 · 141 citations
  2. 2Microstructural Analysis of Evaporated and Pyrolytic Silicon Thin Films1973 · 53 citations
  3. 3The Growth of Oxidation Stacking Faults and the Point Defect Generation at Si ‐ SiO Interface during Thermal Oxidation of Silicon1981 · 112 citations
  4. 4Oxidation, Impurity Diffusion, and Defect Growth in Silicon—An Overview1981 · 82 citations
  5. 5Models for computer simulation of complete IC fabrication process1979 · 97 citations