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Supply current measurement-based test is a valuable defect-based test method for semiconductor chips. Both static leakage current (I DDQ ) and transient current (I DDT ) based tests have the capability of detecting unique defects that improve the fault detection capacity of a test suite. Collectively these test methods are known as I DDX tests. However, due to advances in the semiconductor manufacturing process, the future of these test methods is uncertain. This paper presents a survey of the research reported in the literature to extend the use of I DDX tests to deep sub-micron (DSM) technologies.
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Sabade et al. (2004) studied this question.
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