Suspended Diamond-Shaped Nanowire With Four {111} Facets for High-Performance Ge Gate-All-Around FETs

A feasible pathway to scale germanium (Ge) FETs in future technology nodes has been proposed using the tunable diamond-shaped Ge nanowire (NW). The Ge NW was obtained through a simple top-down dry etching and blanket Ge epitaxy techniques readily available in mass production. The different etching selectivity of surface orientations for Cl2and HBr was employed for the three-step isotropic/anisotropic/isotropic dry etching. The ratio of Cl2and HBr, mask width, and Ge recess depth were crucial for forming the nearly defect-free suspended Ge channel through effective removal of dislocations near the Si/Ge interface. This technique could also be applied for forming diamond-shaped Si NWs. The suspended diamond-shaped NW gate-all-around NWFETs feature excellent electrostatics, the favorable {111} surfaces along the (110) direction with high carrier mobility, and the nearly defect-free Ge channel. The pFET with a high ION/IOFFratio of 6 × 107 and promising nFET performance have been demonstrated successfully.