Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser heterostructures

Leakage of electrons out of the active region of InGaAsP/InP laser heterostructures at different temperatures was measured by a purely electrical method. Comparison of the obtained results with the results of modeling indicates that special attention should be paid to the acceptor doping levels in the p cladding layer immediately adjacent the active region. Lower acceptor concentration may lead to unacceptably high thermionic leakage.>