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Relaxation of strain in InxGa1−xAs layers on GaAs is studied by Raman spectroscopy for layers below and above the critical thickness. We show that the enormous strain of the perfect epitaxial layer is released stepwise with the thickness. It is suggested that dislocations formed at the layer surface impose the growth of the next sublayer of partially released strain, preserving the former grown sublayer of higher strain.
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Brafman et al. (1991) studied this question.
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