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April 1, 2000IEEE Electron Device Letters

Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel

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Authors

YYYee Chia YeeUniversity of California, BerkeleyVSVivek SubramanianIndian Space Research OrganisationJKJ. KedzierskiWrocław University of Science and Technology

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Yee et al. (2000) studied this question.

synapsesocial.com/papers/6a7d694df1daba58ecd5b9efhttps://doi.org/10.1109/55.830968
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