This paper presents an integrated multi-transducer capacitive barometric pressure sensor that is vacuum-sealed at wafer level. The interface circuitry is integrated directly within the sealed reference cavity, making the device immune to parasitic environmental effects. The overall device process merges CMOS circuitry with a dissolved-wafer transducer process and is compatible with bulk- and surface-micromachined transducers. The process employs chemical-mechanical polishing (CMP), anodic bonding, and hermetic lead transfers. The sensor achieves 25 mtorr resolution and is suitable for low-cost packaging. It is composed of a programmable switched-capacitor (SC) readout circuit, five segmented-range pressure transducers, and a reference capacitor, all integrated on a 6.5/spl times/7.5 mm/sup 2/ die using 3 /spl mu/m features.
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Chavan et al. (2002) studied this question.