Electron and hole conduction in silicon nitride at moderate electric fields

The method of isothermal discharge of MNOS-structures with the thickness of SiO2 of 80 to 100 Å is proposed for investigating electron and hole transport in fields of 105 to 106 V/cm through Si3N4 films. The hole transport is investigated on structures with molybdenum “grains” deposited on the SiO2Si3N4 interface. It is shown that transport of both electrons and holes occurs according to the Poole-Frenkel effect.