Indium-Tin-Oxide Thin-Film Transistors With High Field-Effect Mobility (129.5 cm ² /V⋅s) and Low Thermal Budget (150 °C)

In this letter, we demonstrate high performance Indium-Tin-Oxide thin-film transistors (ITO TFTs) with low thermal budget of process temperature less than 150 °C and a record high peak field-effect mobility (μ eff)of 129.5 cm2/V· samong any kind of oxide semiconductor (OS) based TFTs with sub-5 nm channel thickness. In addition, the TFTs realized in this work also achieve decent features in terms of other key figure-of-merits, such as high on/off ratio, low drain-induced-barrier-lowering (DIBL), and a small frequency dispersion of the capacitance-voltage (C-V) characteristics. With further benefit of an raised S/D structure and by scaling the channel length (LCH)of the device down to 50 nm, it presents an extremely high on-state current (Iₒₙ)of1260.9 ~μ A/μ mat a gate overdrive voltageVₒᵥof 4 V and a moderate drain to source voltageVDSof 0.5 V as well as one of the best peak extrinsic transconductance (G_ m, ext)of458 ~μ S/μ mat aVDSof 0.5 V among OS-TFTs.