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The influence of precipitation on phosphorus diffusivity is investigated at temperatures of 850 and 1000 °C in heavily implanted (4 × 1016 P+/cm2) and laser annealed silicon specimens. By experiments performed changing the quantity of precipitated phosphorus, while keeping constant the dopant concentration, it is shown that precipitation does not generate interstitials in such amount to affect the phosphorus diffusivity.
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Angelucci et al. (1986) studied this question.
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