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The presence of an aluminum overlayer on the polysilicon gate of MOS capacitors was found to enhance the generation of interface states strongly by ionizing radiation and Fowler-Nordheim electron injection. The effect is eliminated by removal of the metal before, but not after, sintering. The reduction, during the sinter, of water-related species by the aluminum, producing atomic hydrogen, is suggested as the probable cause of this behavior.>
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G.J. Dunn (1989) studied this question.
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