Answers are grounded in this paper and cite their sources.
Room-temperature pulsed AlGaAs/GaAs vertical-cavity surface-emitting laser diode (VCSELD) has been grown on Si substrate using metalorganic chemical vapor deposition. The VCSELD structure grown on Si substrate consists of a single quantum well active layer and a 20-pair of AlAs/GaAs distributed Bragg reflector (DBR). The measured reflectivity of the 20-pair of AlAs/GaAs DBR was 93% at the wavelength of 860 nm. The VCSELD on Si substrate exhibited a threshold current of 79 mA and a threshold current density of 4.9 kA/cm/sup 2/ under pulsed condition at room temperature.>
No takes yet. Share an insight, caveat, or question.
Egawa et al. (1994) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: