It is shown that the intensity of the 0.93eV emission band (the concentration of the 0.93 eV radiative centres) in p-GaAs can be increased and subsequently decreased by annealing. Evidence is presented that the centre giving rise to the 0.93 eV emission, may be associated with interstitial copper atoms and arsenic vacancies.
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Vorobkalo et al. (1972) studied this question.
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