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November 1, 1975IEEE Transactions on Electron Devices

Modeling of an ion-implanted silicon-gate depletion-mode IGFET

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JHJ.S.T. HuangFujian University of Traditional Chinese MedicineGTG.W. TaylorUnited States Army Medical Command

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Huang et al. (1975) studied this question.

synapsesocial.com/papers/6a838558df262e78b07213a8https://doi.org/10.1109/t-ed.1975.18259
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  1. 1Majority carrier surface mobilities in thermally oxidized silicon1968 · 21 citations
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  3. 3Depletion-mode IGFET made by deep ion implantation1973 · 45 citations
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  5. 5A simple theory for threshold voltage modulation in IGFETs1968 · 6 citations