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January 1, 1998IEEE Transactions on Electron Devices

An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation

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Authors

TSTetsuya SuemitsuTohoku UniversityTET. EnokiNTT (Japan)NSNobuyuki SanoUniversity of Tsukuba

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Suemitsu et al. (1998) studied this question.

synapsesocial.com/papers/6a83b779d65172829ee65ad6https://doi.org/10.1109/16.735714
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